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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-220Fa package Wide area of safe operation (ASO) High-speed switching High collector to base voltage VCBO APPLICATIONS For high breakdown voltage highspeed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter 2SC4004 Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage INC Collector-emitter voltage Emitter-base voltage E SEM ANG H Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE 900 800 7 1 2 0.3 UNIT V V V A A A Collector current (DC) Collector current-Peak Base current TC=25ae 30 w 2 150 -55~150 ae ae PC Collector power dissipation Ta=25ae Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4004 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=1mA , IB=0 IC=0.2A ;IB=0.04A IC=0.2A; IB=0.04A VCB=900V; IE=0 VEB=7V; IC=0 IC=0.05A ; VCE=5V IC=0.5A ; VCE=5V IC=0.05A; VCE=10V;f=1MHz 6 3 MIN 800 1.5 1.0 50 50 |I |I TYP. MAX UNIT V V V A A SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT Switching times ton ts tf Fall time Turn-on time CHA IN Storage time E SEM NG OND IC TOR UC 4 1.0 3.0 1.0 MHz |I |I |I s s s IC=0.2A ;IB1=0.04A; IB2=-0.04A;VCC=250V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4004 PACKAGE OUTLINE CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) 3 |
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